International Journal of Electrical Components and Energy Conversion

Volume 6, Issue 1, June 2020

  • Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs

    Alireza Dehghan

    Issue: Volume 6, Issue 1, June 2020
    Pages: 1-6
    Received: Aug. 12, 2020
    Accepted: Aug. 26, 2020
    Published: Sep. 07, 2020
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    Abstract: In deep sub-micron technologies, conventional silicon-based transistors are faced main several problems related to the short-channel effects such as power dissipation, subthreshold leakage, and drain-induced barrier lowering (DIBL). Graphene nano-ribbon field-effect transistors (GNRFETs) have become a potential contender as a substitute for traditi... Show More